Oxidation Induced ON sub(1), ON sub(2a/b) Defects in 4H-SiC Characterized by DLTS

The deep levels ON sub(1) and ON sub(2a/b) introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON sub(2a/b) defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4)...

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Veröffentlicht in:	Materials science forum 2014-02, Vol.778-780, p.281-284
Hauptverfasser:	Booker, Ian D, Abdalla, Hassan, Lilja, Louise, Ul Hassan, Jawad, Bergman, Peder, Sveinbiornsson, Einar O, Janzen, Erik
Format:	Artikel
Sprache:	eng
Schlagworte:	Beta decay Correlation analysis Cross sections Defects Electron capture Energy levels Oxidation
Online-Zugang:	Volltext
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