Oxidation Induced ON sub(1), ON sub(2a/b) Defects in 4H-SiC Characterized by DLTS

Oxidation Induced ON sub(1), ON sub(2a/b) Defects in 4H-SiC Characterized by DLTS

The deep levels ON sub(1) and ON sub(2a/b) introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON sub(2a/b) defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4)...

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Veröffentlicht in:Materials science forum 2014-02, Vol.778-780, p.281-284
Hauptverfasser: Booker, Ian D, Abdalla, Hassan, Lilja, Louise, Ul Hassan, Jawad, Bergman, Peder, Sveinbiornsson, Einar O, Janzen, Erik
Format: Artikel
Sprache:eng
Schlagworte:
Beta decay
Correlation analysis
Cross sections
Defects
Electron capture
Energy levels
Oxidation
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Zusammenfassung:The deep levels ON sub(1) and ON sub(2a/b) introduced by oxidation into 4H-SiC are characterized via standard DLTS and via filling pulse dependent DLTS measurements. Separation of the closely spaced ON sub(2a/b) defect is achieved by using a higher resolution correlation function (Gaver-Stehfest 4) and apparent energy level, apparent electron capture cross section and filling pulse measurement derived capture cross sections are given.
ISSN:0255-5476
DOI:10.4028/www.scientific.net/MSF.778-780.281