Transition metal inclusion in RhoZMOF materials
Porous RhoZMOF is a negatively charged zeolite-like MOF material susceptible to post-synthesis modification by an ion-exchange process replacing as-synthesized organic cations with transition metals. This material exhibiting open transition metal sites is a very attractive candidate for industrial a...
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Veröffentlicht in: | CrystEngComm 2015-01, Vol.17 (2), p.338-343 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Porous RhoZMOF is a negatively charged zeolite-like MOF material susceptible to post-synthesis modification by an ion-exchange process replacing as-synthesized organic cations with transition metals. This material exhibiting open transition metal sites is a very attractive candidate for industrial applications related to clean energy technologies, like electrochemistry and gas storage. In the present work, partial or total Co
2+
, Ni
2+
and Cu
2+
inclusions have been successfully carried out in the RhoZMOF structure by ion-exchange treatment. Particularly, complete exchange of HDMA
+
with Co
2+
could be reached at room temperature after 12 h of contact time. For Cu
2+
exchange, a rapid transformation of the RhoZMOF structure into a new Cu-rich, crystalline and practically non-porous phase was observed at room temperature; its appearance can be avoided and the desired structure can be preserved when ion-exchange treatment is carried out at −20 °C for 6 h, reaching a partial ion-exchange degree of 30%. Moreover, for Ni
2+
ion-exchange treatment at 25 and 0 °C, a covering of an amorphous Ni-rich organometallic phase over the crystals was detected by SEM analysis; its appearance can be prevented by reducing the amount of HDMA
+
in the media by developing the ion-exchange process in two steps: exchanging HDMA
+
with Na
+
and Na
+
with Ni
2+
. The results provide a post-synthesis modification route for obtaining porous MOF materials containing open transition metal sites accessible for redox catalysis and selective gas adsorption. |
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ISSN: | 1466-8033 1466-8033 |
DOI: | 10.1039/C4CE01401D |