1530 V, 16.8m Omega .cm super( 2), 4H-SiC normally-off vertical junction field-effect transistor

1530 V, 16.8m Omega .cm super( 2), 4H-SiC normally-off vertical junction field-effect transistor

The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15...

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Veröffentlicht in:Electronics letters 2004-02, Vol.40 (4), p.1-1
Hauptverfasser: Fursin, L G, Zhao, J H, Weiner, M
Format: Artikel
Sprache:eng
Schlagworte:
Blocking
Channels
Drift
Electric potential
Epitaxy
Field effect transistors
Semiconductor devices
Voltage
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Zusammenfassung:The fabrication and characterisation of a 4H-SiC double-gated, normally-off vertical junction field-effect transistor (VJFET) without epitaxial regrowth, with an implanted vertical channel, is reported. A blocking voltage of 1530 V in the normally-off mode has been achieved with a drift layer of 15 mu m using a two-step junction termination extension. The VJFET shows a low specific on-resistance R sub( ON_SP) of 16.8 m Omega ; . cm super( 2).
ISSN:0013-5194
1350-911X