Low-noise silicon carbide X-ray sensor with wide operating temperature range

A silicon carbide (SiC) sensor is presented with high energy resolution in X-ray spectroscopy over a wide temperature range (27-100°C). The sensor, consisting of Schottky barrier diode on high resistivity epitaxial SiC, is characterised by an extremely low noise due to its ultra-low reverse current density even at high operating temperature (15 pA/cm^sup 2^ at 27°C and 0.5 nA/cm^sup 2^ at 100°C). Equivalent noise charges as low as 17 electrons rms at 27°C and 47 electrons rms at 100°C have been measured, allowing X-ray spectroscopy with an energy resolution as low as 315 eV and 797 eV FWHM, respectively.