Fabrication of highly transparent self-switching diodes using single layer indium tin oxide

The fabrication of a self-switching diode (SSD) from a single layer of n-type indium tin oxide [In^sub 2^O^sub 3^:Sn (ITO)] is reported. The material was grown using a reactive thermal evaporation and nanostructured using a focused ion beam. The resultant device demonstrates strong current rectification, as well as a high threshold and breakdown voltage, owing to the higher density of states associated with the material when compared to other reported SSD-device material. It is shown that this work could potentially lead to a range of new transparent devices based on ITO without the need to develop high quality ptype material.