Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor
•We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor.•Graphene oxide (GO) nanosheets were prepared by using modified Hummers method.•We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PV...
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| Veröffentlicht in: | Applied surface science 2014-11, Vol.318, p.74-78 |
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| creator | KARTERI, İbrahim KARATAS, Sükrü YAKUPHANOGLU, Fahrettin |
| description | •We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor.•Graphene oxide (GO) nanosheets were prepared by using modified Hummers method.•We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor.
We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and Ion/Ioff of GO-TFT were found to be 0.105cm2V−1s−1, −8.7V, 4.03V/decade and 10, respectively. |
| doi_str_mv | 10.1016/j.apsusc.2014.01.013 |
| format | Article |
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We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and Ion/Ioff of GO-TFT were found to be 0.105cm2V−1s−1, −8.7V, 4.03V/decade and 10, respectively.</description><identifier>ISSN: 0169-4332</identifier><identifier>EISSN: 1873-5584</identifier><identifier>DOI: 10.1016/j.apsusc.2014.01.013</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Condensed matter: structure, mechanical and thermal properties ; Cross-disciplinary physics: materials science; rheology ; Electrical properties ; Exact sciences and technology ; Graphene ; Graphene oxide ; Modified Hummers method ; Nanostructure ; Oxides ; Physics ; Polymethyl methacrylates ; Semiconductor devices ; Semiconductors ; Thin film transistor ; Thin films ; Transistors</subject><ispartof>Applied surface science, 2014-11, Vol.318, p.74-78</ispartof><rights>2014 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c439t-943e4c4584db2c8b83cf0a049225c647f9941c13763152ed7addd4836a9c16be3</citedby><cites>FETCH-LOGICAL-c439t-943e4c4584db2c8b83cf0a049225c647f9941c13763152ed7addd4836a9c16be3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.apsusc.2014.01.013$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,780,784,789,790,3550,23930,23931,25140,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28891875$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>KARTERI, İbrahim</creatorcontrib><creatorcontrib>KARATAS, Sükrü</creatorcontrib><creatorcontrib>YAKUPHANOGLU, Fahrettin</creatorcontrib><title>Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor</title><title>Applied surface science</title><description>•We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor.•Graphene oxide (GO) nanosheets were prepared by using modified Hummers method.•We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor.
We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. 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We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and Ion/Ioff of GO-TFT were found to be 0.105cm2V−1s−1, −8.7V, 4.03V/decade and 10, respectively.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.apsusc.2014.01.013</doi><tpages>5</tpages></addata></record> |
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| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Electrical properties Exact sciences and technology Graphene Graphene oxide Modified Hummers method Nanostructure Oxides Physics Polymethyl methacrylates Semiconductor devices Semiconductors Thin film transistor Thin films Transistors |
| title | Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor |
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