Electrical characterization of graphene oxide and organic dielectric layers based on thin film transistor

•We report the synthesis of graphene oxide nanosheets and electrical characterization of graphene oxide based thin film transistor.•Graphene oxide (GO) nanosheets were prepared by using modified Hummers method.•We used insulator layers which are polymethylmethacrylate (PMMA) and polyvinyl phenol (PVP) for graphene oxide based thin flim transistor. We have studied the electrical characteristics of graphene oxide based thin flim transistor with the polymer insulators such as polymethyl methacrylate (PMMA) and poly-4-vinylphenol (PVP). Graphene oxide (GO) nanosheets were prepared by using modified Hummers method. The structural properties of GO nanosheets were characterized with Ultraviolet Visible (UV–vis), FT-IR spectroscopy and X-rays diffraction (XRD). Graphene oxide based thin flim transistor (GO-TFT) was prepared by a spin-coating and thermal evaporation technique. The electrical characterization of GO-TFT was analyzed by output and transfer characteristics by using Keithley-4200 semiconductor characterization system (SCS). The graphene oxide based thin flim transistor devices show p-type semiconducting behavior. The mobility, threshold voltage, sub-threshold swing value and Ion/Ioff of GO-TFT were found to be 0.105cm2V−1s−1, −8.7V, 4.03V/decade and 10, respectively.