Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer

Fully-integrated 32 dBm, 1.5-2.9 GHz SiGe-bipolar power amplifier using power-combining transformer

A fully-integrated power amplifier for 1.5-2.9 GHz was realised, in a 28 GHz-f^sub T^ SiGe-bipolar technology. No external components are required, owing to the novel power-combining transformer structure. An output power of 32.3 dBm with a power added efficiency over 30% is achieved at 3.5 V.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Electronics letters 2005-08, Vol.41 (16), p.1-1
Hauptverfasser: Vasylyev, A, Weger, P, Bakalski, W, Simbürger, W
Format: Artikel
Sprache:eng
Schlagworte:
Power amplifiers
Transformers
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A fully-integrated power amplifier for 1.5-2.9 GHz was realised, in a 28 GHz-f^sub T^ SiGe-bipolar technology. No external components are required, owing to the novel power-combining transformer structure. An output power of 32.3 dBm with a power added efficiency over 30% is achieved at 3.5 V.
ISSN:0013-5194
1350-911X