Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon

Very low threshold vertical emitting laser operation in InP graphite photonic crystal slab on silicon

In this paper, the graphite-lattice photonic crystal structures in InP-based heterostructures transferred onto silicon, including a multi-quantum well active layer, have been designed and fabricated. A 1.5 μm vertical emission laser operation was observed at room temperature, with very low threshold...

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Veröffentlicht in:Electronics letters 2003-03, Vol.39 (6), p.1-1
Hauptverfasser: Mouette, J, Seassal, C, Letartre, X, Rojo-Romeo, P, Leclercq, J-L, Regreny, P, Viktorovitch, P, Jalaguier, E, Perreau, P, Moriceau, H
Format: Artikel
Sprache:eng
Schlagworte:
Emission
Emittance
Graphite
Lasers
Photonic crystals
Silicon
Slabs
Thresholds
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Zusammenfassung:In this paper, the graphite-lattice photonic crystal structures in InP-based heterostructures transferred onto silicon, including a multi-quantum well active layer, have been designed and fabricated. A 1.5 μm vertical emission laser operation was observed at room temperature, with very low threshold (below 50 μW).
ISSN:0013-5194
1350-911X