High efficiency long wavelength VCSEL on InP grown by MOCVD

The high efficiency continuous-wave operation of 1.53 μm vertical cavity surface emitting lasers with buried tunnel junction grown by metal organic chemical vapour deposition has been demonstrated. Devices show a high differential quantum efficiency of 46% and a singlemode power of 1 mW. Minimum thr...

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Veröffentlicht in:	Electronics letters 2003-03, Vol.39 (5), p.1-1
Hauptverfasser:	Nishiyama, N, Caneau, C, Guryanov, G, Liu, X S, Hu, M, Zah, C E
Format:	Artikel
Sprache:	eng
Schlagworte:	Devices Electric potential Indium phosphides Threshold currents Tunnel junctions Vertical cavity surface emission lasers Voltage Wavelengths
Online-Zugang:	Volltext
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Zusammenfassung:	The high efficiency continuous-wave operation of 1.53 μm vertical cavity surface emitting lasers with buried tunnel junction grown by metal organic chemical vapour deposition has been demonstrated. Devices show a high differential quantum efficiency of 46% and a singlemode power of 1 mW. Minimum threshold current and voltage are 0.45 mA and 1.3 V at room temperature, respectively for devices of 5 μm diameter.
ISSN:	0013-5194 1350-911X