Synthesis of monoclinic structure gallium oxide epitaxial film on MgAl6O10 (100)

β-Ga2O3 films have been deposited on single crystalline MgAl6O10 (100) substrate by the metal organic chemical vapor deposition (MOCVD) technique in the temperature range 550–700°C. Structural and optical properties of the film as well as the epitaxial mechanism have been investigated in detail. The results of structure analyses show that the film prepared at 650°C has the best crystallinity with a clear epitaxial relationship of β-Ga2O3 (100)∥MgAl6O10 (100) and β-Ga2O3 [001]∥MgAl6O10 〈011〉. A schematic diagram is proposed to illustrate the four-fold domain structures inside the film. The average transmittance of the Ga2O3 film at 650°C in the visible range exceeded 94% and the optical band gap of the film is about 4.86eV. •β-Ga2O3 films were prepared on MgAl6O10 (100) substrates by MOCVD.•The epitaxial relationship was β-Ga2O3 (100)∥MgAl6O10 (100) with Ga2O3 [001]∥MgAl6O10 〈011〉.•A schematic diagram was used to illustrate the four-fold domain structure exists inside the film.•The average transmittance of the Ga2O3 film at 650°C in visible range exceeded 94%.