Organic Nanowire Fabrication and Device Applications

Organic nanowires (ONWs) are flexible, stretchable, and have good electrical properties, and therefore have great potential for use in next‐generation textile and wearable electronics. Analysis of trends in ONWs supports their great potential for various stretchable and flexible electronic applicati...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-01, Vol.11 (1), p.45-62
Hauptverfasser: Min, Sung-Yong, Kim, Tae-Sik, Lee, Yeongjun, Cho, Himchan, Xu, Wentao, Lee, Tae-Woo
Format: Artikel
Sprache:eng
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Zusammenfassung:Organic nanowires (ONWs) are flexible, stretchable, and have good electrical properties, and therefore have great potential for use in next‐generation textile and wearable electronics. Analysis of trends in ONWs supports their great potential for various stretchable and flexible electronic applications such as flexible displays and flexible photovoltaics. Numerous methods can be used to prepare ONWs, but the practical industrial application of ONWs has not been achieved because of the lack of reliable techniques for controlling and patterning of individual nanowires. Therefore, an “individually controllable” technique to fabricate ONWs is essential for practical device applications. In this paper, three types of fabrication methods of ONWs are reviewed: non‐alignment methods, massive‐alignment methods, and individual‐alignment methods. Recent research on electronic and photonic device applications of ONWs is then reviewed. Finally, suggestions for future research are put forward. Organic nanowires (ONWs) have great advantages for application in flexible and stretchable nano‐electronics, including field‐effect transistors and circuits, light‐emitting diodes, and photovoltaics. Here, various kinds of ONW fabrication methods are classified according to their possible alignments: non‐alignment methods, massive‐alignment method, and individual‐alignment methods. Then recent research for electronic and photonic device applications of ONWs is introduced.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201401487