Engineering of InGaAsP layer structures for low divergent long wavelength lasers

Engineering of InGaAsP layer structures for low divergent long wavelength lasers

The epitaxial layers of an InGaAsP laser structure have been engineered to obtain a transverse mode size of 3.1 mm and a FWHM transverse divergence to 22° while still retaining singlemode operation. Ridge lasers based on this structure demonstrate 32% butt coupling efficiency to singlemode fibre.

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Veröffentlicht in:Electronics letters 2002-05, Vol.38 (11), p.1-1
Hauptverfasser: Corbett, B, Kearney, I, Lambkin, P, Justice, J, Buckley, U, Thomas, K
Format: Artikel
Sprache:eng
Schlagworte:
Divergence
Epitaxial layers
Fibre
Joining
Lasers
Ridges
Wavelengths
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Zusammenfassung:The epitaxial layers of an InGaAsP laser structure have been engineered to obtain a transverse mode size of 3.1 mm and a FWHM transverse divergence to 22° while still retaining singlemode operation. Ridge lasers based on this structure demonstrate 32% butt coupling efficiency to singlemode fibre.
ISSN:0013-5194
1350-911X