High efficiency integral III-N/II-VI blue-green laser converter

High efficiency integral III-N/II-VI blue-green laser converter

An integral optically-pumped laser converter comprising an ultra-low-threshold green (∼540 nm) CdSe quantum dot laser chip, pumped by a blue InGaN/GaN quantum well heterostructure laser grown on Si (111) substrates, has been fabricated and studied. The maximum achieved quantum efficiency and pulse o...

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Veröffentlicht in:Electronics letters 2007-02, Vol.43 (3), p.1-1
Hauptverfasser: Sorokin, S V, Sedova, I V, Toropov, A A, Yablonskii, G P, Lutsenko, E V, Voinilovich, A G, Danilchyk, A V, Dikme, Y, Kalisch, H, Schineller, B, Heuken, M, Ivanov, S V
Format: Artikel
Sprache:eng
Schlagworte:
Chip formation
Converters
Gallium nitrides
Indium gallium nitrides
Integrals
Lasers
Quantum wells
Silicon substrates
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Zusammenfassung:An integral optically-pumped laser converter comprising an ultra-low-threshold green (∼540 nm) CdSe quantum dot laser chip, pumped by a blue InGaN/GaN quantum well heterostructure laser grown on Si (111) substrates, has been fabricated and studied. The maximum achieved quantum efficiency and pulse output power in green are as high as 14% and 3 W, respectively.
ISSN:0013-5194
1350-911X