Low Carrier Density Epitaxial Graphene Devices On SiC

The transport characteristics of graphene devices with low n‐ or p‐type carrier density (∼1010–1011 cm‐2), fabricated using a new process that results in minimal organic surface residues, are reported. The p‐type molecular doping responsible for the low carrier densities is initiated by aqua regia....

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-01, Vol.11 (1), p.90-95
Hauptverfasser:	Yang, Yanfei, Huang, Lung-I., Fukuyama, Yasuhiro, Liu, Fan-Hung, Real, Mariano A., Barbara, Paola, Liang, Chi-Te, Newell, David B., Elmquist, Randolph E.
Format:	Artikel
Sprache:	eng
Schlagworte:	aqua regia Carrier density Devices epitaxial graphene Epitaxy Graphene Magnetic fields Nanotechnology quantum Hall plateau Residues Silicon carbide Transport
Online-Zugang:	Volltext
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