Low Carrier Density Epitaxial Graphene Devices On SiC

Low Carrier Density Epitaxial Graphene Devices On SiC

The transport characteristics of graphene devices with low n‐ or p‐type carrier density (∼1010–1011 cm‐2), fabricated using a new process that results in minimal organic surface residues, are reported. The p‐type molecular doping responsible for the low carrier densities is initiated by aqua regia....

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2015-01, Vol.11 (1), p.90-95
Hauptverfasser: Yang, Yanfei, Huang, Lung-I., Fukuyama, Yasuhiro, Liu, Fan-Hung, Real, Mariano A., Barbara, Paola, Liang, Chi-Te, Newell, David B., Elmquist, Randolph E.
Format: Artikel
Sprache:eng
Schlagworte:
aqua regia
Carrier density
Devices
epitaxial graphene
Epitaxy
Graphene
Magnetic fields
Nanotechnology
quantum Hall plateau
Residues
Silicon carbide
Transport
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Zusammenfassung:The transport characteristics of graphene devices with low n‐ or p‐type carrier density (∼1010–1011 cm‐2), fabricated using a new process that results in minimal organic surface residues, are reported. The p‐type molecular doping responsible for the low carrier densities is initiated by aqua regia. The resulting devices exhibit highly developed ν = 2 quantized Hall resistance plateaus at magnetic field strengths of less than 4 T.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201400989