60 GHz compact low noise amplifier in 65 nm CMOS

60 GHz compact low noise amplifier in 65 nm CMOS

A single-ended low noise amplifier in 65 nm CMOS for applications at 60 GHz is presented. Its measured gain and noise figure at the centre frequency of 57 GHz are 19.1 dB and 5.5 dB, respectively, and it provides wideband matching. Transistors in the design have an asymmetrically fingered layout whi...

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Veröffentlicht in:Electronics letters 2009-09, Vol.45 (20), p.1-1
Hauptverfasser: Kunze, J W, Weyers, C, Mayr, P, Bilgic, A, Hausner, J
Format: Artikel
Sprache:eng
Schlagworte:
Amplifiers
Asymmetry
Channels
CMOS
Gain
Low noise
Noise levels
Wideband
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Zusammenfassung:A single-ended low noise amplifier in 65 nm CMOS for applications at 60 GHz is presented. Its measured gain and noise figure at the centre frequency of 57 GHz are 19.1 dB and 5.5 dB, respectively, and it provides wideband matching. Transistors in the design have an asymmetrically fingered layout which reduces parasitic capacitances while simultaneously allowing for higher channel current densities.
ISSN:0013-5194
1350-911X