Readout drain current dependence of programming window in nanocrystal memory cells

Readout drain current dependence of programming window in nanocrystal memory cells

The different behaviour of nanocrystal memory cells in linear and sub-threshold region was studied. It was found that the programming window reduces with increasing readout drain current. This peculiar behaviour derives from the presence of the discrete nanodots and it has not been observed in conve...

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Veröffentlicht in:Electronics letters 2008-03, Vol.44 (6), p.1-1
Hauptverfasser: Wrachien, N, Autizi, E, Cester, A, Portoghese, R, Gerardi, C
Format: Artikel
Sprache:eng
Schlagworte:
Drains
Gates
Memory (computers)
Nanocrystals
Nanostructure
Programming
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Zusammenfassung:The different behaviour of nanocrystal memory cells in linear and sub-threshold region was studied. It was found that the programming window reduces with increasing readout drain current. This peculiar behaviour derives from the presence of the discrete nanodots and it has not been observed in conventional floating gate memories.
ISSN:0013-5194
1350-911X