Study of properties of tellurium-doped indium phosphide as photoconversion material
The results of the studies of n -InP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide band-gap and radiation resistance. It has been determined that, at a temperature of T > 50°C, this st...
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| Veröffentlicht in: | Applied solar energy 2014-07, Vol.50 (3), p.143-145 |
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| container_title | Applied solar energy |
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| creator | Leiderman, A. Yu Saidov, A. S. Khashaev, M. M. Rakhmonov, U. Kh |
| description | The results of the studies of
n
-InP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide band-gap and radiation resistance. It has been determined that, at a temperature of
T
> 50°C, this structure generates current (up to 0.15 μA) and voltage (up to 11 mV); this is caused by the thermally stimulated formation of vacancies. |
| doi_str_mv | 10.3103/S0003701X14030098 |
| format | Article |
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n
-InP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide band-gap and radiation resistance. It has been determined that, at a temperature of
T
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n
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T
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n
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T
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| ispartof | Applied solar energy, 2014-07, Vol.50 (3), p.143-145 |
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| subjects | Aluminum Analysis Contact resistance Electric potential Electrical Machines and Networks Electricity generation Engineering Formations Gallium arsenide Heliotechnical Materials Science Indium Indium phosphides Photovoltaic cells Power Electronics Radiation Radiation resistance Semiconductors Solar energy Studies Tellurium Temperature Vacancies Voltage |
| title | Study of properties of tellurium-doped indium phosphide as photoconversion material |
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