Study of properties of tellurium-doped indium phosphide as photoconversion material

Study of properties of tellurium-doped indium phosphide as photoconversion material

The results of the studies of n -InP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide band-gap and radiation resistance. It has been determined that, at a temperature of T > 50°C, this st...

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Veröffentlicht in:Applied solar energy 2014-07, Vol.50 (3), p.143-145
Hauptverfasser: Leiderman, A. Yu, Saidov, A. S., Khashaev, M. M., Rakhmonov, U. Kh
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum
Analysis
Contact resistance
Electric potential
Electrical Machines and Networks
Electricity generation
Engineering
Formations
Gallium arsenide
Heliotechnical Materials Science
Indium
Indium phosphides
Photovoltaic cells
Power Electronics
Radiation
Radiation resistance
Semiconductors
Solar energy
Studies
Tellurium
Temperature
Vacancies
Voltage
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Zusammenfassung:The results of the studies of n -InP〈Te〉 with simple ohmic contacts in the temperature range of 30–250°C have been given because this material is promising for the photoconverters due to its wide band-gap and radiation resistance. It has been determined that, at a temperature of T > 50°C, this structure generates current (up to 0.15 μA) and voltage (up to 11 mV); this is caused by the thermally stimulated formation of vacancies.
ISSN:0003-701X
1934-9424
DOI:10.3103/S0003701X14030098