Physically-based RF model for metal-oxide-metal capacitors

Physically-based RF model for metal-oxide-metal capacitors

A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that t...

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Veröffentlicht in:Electronics letters 2000-03, Vol.36 (5), p.1-1
Hauptverfasser: Geng, Chunqi, Chew, Kok Wai, Yeo, Kiat Seng, Do, Manh Anh, Ma, Jianguo, Chua, Chee Tee, Shao, Kai
Format: Artikel
Sprache:eng
Schlagworte:
Capacitors
Frequency ranges
Physical properties
Radio frequencies
Topology
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Beschreibung
Zusammenfassung:A new metal-oxide-metal (MOM) capacitor model is presented for RF (radio frequency) applications. Parasitics resulting from the geometry and physical topology of the model are taken into account. The model fits very well with the measured data in the frequency range 1-10 GHz. The results show that the proposed model provides more accurate results than the conventional model, while retaining the physical properties of every element in the model.
ISSN:0013-5194
1350-911X