High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

Using an inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 mm gate-length enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 1 mm gate-length devices exhibited maximum drain current density of 470 mA/mm, extrinsic transconductanc...

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Veröffentlicht in:Electronics letters 2003-11, Vol.39 (24), p.1-1
Hauptverfasser: Kumar, V, Kuliev, A, Tanaka, T, Otoki, Y, Adesida, I
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitrides
Devices
Drains
Gallium nitrides
High electron mobility transistors
Semiconductor devices
Transconductance
Unity
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Zusammenfassung:Using an inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 mm gate-length enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 1 mm gate-length devices exhibited maximum drain current density of 470 mA/mm, extrinsic transconductance of 248 mS/mm and threshold voltage of 75 mV. These characteristics are much higher than previously reported values for GaN-based E-mode HEMTs. A unity gain cutoff frequency ( fT) of 8 GHz and a maximum frequency of oscillation ( fmax) of 26 GHz were also measured on these devices.
ISSN:0013-5194
1350-911X