Analytical modelling of gate tunnelling current of MOSFETs based on quantum tunnelling

The gate tunnelling current of MOSFETs is an important factor in modelling ultra-small devices. In this reported work, the gate tunnelling current in present-generation MOSFETs is studied. Presented in this article is a model for the gate tunnelling current in MOSFETs having ultra-thin gate oxides. In the proposed model, the electron wavefunction at the semiconductor-oxide interface is calculated and inversion charge by assuming the inversion layer as a potential well, including some simplifying assumptions. Then the gate tunnelling current is calculated, using the calculated wavefunction. The proposed model results have excellent agreement with experimental results in the literature.