Improved outdoor performance of a-Si:H photovoltaic modules fabricated using a high speed two-step deposition of absorbers

We developed high throughput, high efficiency 1.43m2 hydrogenated amorphous silicon (a-Si:H) single-junction photovoltaic (PV) modules using a two-step deposition for the intrinsic a-Si:H absorber with the high deposition rate of 0.41nm/s. The developed module using the two-step deposition method leads to higher initial maximum power (Pmax) due to the reduced recombination loss at the p/i interface, compared to the a-Si:H single-junction PV module fabricated by the conventional one-step deposition with the low deposition rate of 0.20nm/s. In addition, the developed module exhibits moderate light-induced degradation ratio of 26.1% in an outdoor exposure test with accumulated solar irradiance >380kWh/m2. Thus, the comparable energy output gain is confirmed via a long-term outdoor field test. Consequently, superior throughput of the developed module over the conventional module is possible with comparable stabilized performance. •We develop a high speed two-step deposition method for cost-effective 1.43m2 a-Si:H PV modules.•With the high deposition rate of 0.41nm/s, the high initial Pmax value of 124.8W is achieved.•The developed module exhibits the moderate outdoor-exposed light-induced degradation of 26.1%.•The comparable energy output gain is obtained compared to the conventional module.•Therefore, it is possible to simultaneously achieve the high throughput and high performance.