Injection-locking and power combining with double barrier resonant tunnelling diodes

Injection-locking and power combining with double barrier resonant tunnelling diodes

Injection-locked oscillations at 8.5 GHz and 11.3 GHz are reported in structures with four GaAs/AlAs double barrier resonant tunnelling diodes bridging a coplanar line. Their outputs add to the observed -8 dBm. More devices within a smaller geometry could generate 0 dBm up to several hundred gigaher...

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Veröffentlicht in:Electronics letters 2001-09, Vol.37 (20), p.1-1
Hauptverfasser: Cantu, H I, Truscott, W S
Format: Artikel
Sprache:eng
Schlagworte:
Barriers
Bridging
Devices
Diodes
Gallium arsenide
Gallium arsenides
Oscillations
Tunnelling
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Zusammenfassung:Injection-locked oscillations at 8.5 GHz and 11.3 GHz are reported in structures with four GaAs/AlAs double barrier resonant tunnelling diodes bridging a coplanar line. Their outputs add to the observed -8 dBm. More devices within a smaller geometry could generate 0 dBm up to several hundred gigahertz.
ISSN:0013-5194
1350-911X