Charge pump circuit for depletion-mode oxide TFTs

A chrage pump circuit suitable for depletion-mode oxide thin-film transistors (TFT) is presented. In this circuit, the negative gate-to-source bias is applied to turn off the n-type oxide TFTs because they have negative threshold voltages (V^sub T^). For this operation, two different supply voltages...

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Veröffentlicht in:Electronics letters 2011-03, Vol.47 (6), p.1-1
Hauptverfasser: Oh, M W, Leem, H G, Yoon, S M, Byun, C W, Park, S H K, Oh, H S, Park, K C
Format: Artikel
Sprache:eng
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Zusammenfassung:A chrage pump circuit suitable for depletion-mode oxide thin-film transistors (TFT) is presented. In this circuit, the negative gate-to-source bias is applied to turn off the n-type oxide TFTs because they have negative threshold voltages (V^sub T^). For this operation, two different supply voltages are used, i.e. V^sub DD^ and V^sub DD^/2. Spice simulation shows that the power efficiency is about 70% in generating V^sub DD^ x 2 output voltage with 50 μA load current. The output voltages of the fabricated circuits are comparable to those of the simulation results.
ISSN:0013-5194
1350-911X