Theoretical Study of Piezo-phototronic Nano-LEDs

Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is no...

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Veröffentlicht in:	Advanced materials (Weinheim) 2014-11, Vol.26 (42), p.7209-7216
Hauptverfasser:	Liu, Ying, Niu, Simiao, Yang, Qing, Klein, Benjamin D. B., Zhou, Yu Sheng, Wang, Zhong Lin
Format:	Artikel
Sprache:	eng
Schlagworte:	Channels depletion charge channels Devices finite-element method Mathematical analysis P-type semiconductors piezo-phototronics Piezoelectricity Semiconductors Simulation Strain
Online-Zugang:	Volltext
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