Theoretical Study of Piezo-phototronic Nano-LEDs

Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is non‐piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light‐emission efficiency in piezo‐phototronic light‐emitting devices.