Theoretical Study of Piezo-phototronic Nano-LEDs

Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is no...

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Veröffentlicht in:Advanced materials (Weinheim) 2014-11, Vol.26 (42), p.7209-7216
Hauptverfasser: Liu, Ying, Niu, Simiao, Yang, Qing, Klein, Benjamin D. B., Zhou, Yu Sheng, Wang, Zhong Lin
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container_issue 42
container_start_page 7209
container_title Advanced materials (Weinheim)
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creator Liu, Ying
Niu, Simiao
Yang, Qing
Klein, Benjamin D. B.
Zhou, Yu Sheng
Wang, Zhong Lin
description Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is non‐piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light‐emission efficiency in piezo‐phototronic light‐emitting devices.
doi_str_mv 10.1002/adma.201402328
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subjects Channels
depletion charge channels
Devices
finite-element method
Mathematical analysis
P-type semiconductors
piezo-phototronics
Piezoelectricity
Semiconductors
Simulation
Strain
title Theoretical Study of Piezo-phototronic Nano-LEDs
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