Theoretical Study of Piezo-phototronic Nano-LEDs
Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is no...
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Veröffentlicht in: | Advanced materials (Weinheim) 2014-11, Vol.26 (42), p.7209-7216 |
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creator | Liu, Ying Niu, Simiao Yang, Qing Klein, Benjamin D. B. Zhou, Yu Sheng Wang, Zhong Lin |
description | Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is non‐piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light‐emission efficiency in piezo‐phototronic light‐emitting devices. |
doi_str_mv | 10.1002/adma.201402328 |
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B. ; Zhou, Yu Sheng ; Wang, Zhong Lin</creator><creatorcontrib>Liu, Ying ; Niu, Simiao ; Yang, Qing ; Klein, Benjamin D. B. ; Zhou, Yu Sheng ; Wang, Zhong Lin</creatorcontrib><description>Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is non‐piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light‐emission efficiency in piezo‐phototronic light‐emitting devices.</description><identifier>ISSN: 0935-9648</identifier><identifier>EISSN: 1521-4095</identifier><identifier>DOI: 10.1002/adma.201402328</identifier><identifier>PMID: 25205535</identifier><language>eng</language><publisher>Germany: Blackwell Publishing Ltd</publisher><subject>Channels ; depletion charge channels ; Devices ; finite-element method ; Mathematical analysis ; P-type semiconductors ; piezo-phototronics ; Piezoelectricity ; Semiconductors ; Simulation ; Strain</subject><ispartof>Advanced materials (Weinheim), 2014-11, Vol.26 (42), p.7209-7216</ispartof><rights>2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4868-d8c2205306f8785268ef42eb4b6218ce2aa7a06edec184b54b100782c13148df3</citedby><cites>FETCH-LOGICAL-c4868-d8c2205306f8785268ef42eb4b6218ce2aa7a06edec184b54b100782c13148df3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fadma.201402328$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fadma.201402328$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/25205535$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Liu, Ying</creatorcontrib><creatorcontrib>Niu, Simiao</creatorcontrib><creatorcontrib>Yang, Qing</creatorcontrib><creatorcontrib>Klein, Benjamin D. B.</creatorcontrib><creatorcontrib>Zhou, Yu Sheng</creatorcontrib><creatorcontrib>Wang, Zhong Lin</creatorcontrib><title>Theoretical Study of Piezo-phototronic Nano-LEDs</title><title>Advanced materials (Weinheim)</title><addtitle>Adv. Mater</addtitle><description>Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is non‐piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light‐emission efficiency in piezo‐phototronic light‐emitting devices.</description><subject>Channels</subject><subject>depletion charge channels</subject><subject>Devices</subject><subject>finite-element method</subject><subject>Mathematical analysis</subject><subject>P-type semiconductors</subject><subject>piezo-phototronics</subject><subject>Piezoelectricity</subject><subject>Semiconductors</subject><subject>Simulation</subject><subject>Strain</subject><issn>0935-9648</issn><issn>1521-4095</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLw0AURgdRbK1uXUqWblLnncmy9BGFthZa0d0wmUxoNOnUTILWX29KanGncOFuzncu9wPgGsE-ghDfqaRQfQwRhZhgcQK6iGHkUxiyU9CFIWF-yKnogAvnXiGEIYf8HHQww5AxwroArtbGlqbKtMq9ZVUnO8-m3iIzX9bfrm1lq9JuMu3N1cb60_HIXYKzVOXOXB12DzxNxqvhvT99jB6Gg6mvqeDCT4TGzQ0CeSoCwTAXJqXYxDTmGAltsFKBgtwkRiNBY0bj5p1AYI0IoiJJSQ_ctt5tad9r4ypZZE6bPFcbY2snEad4f0Ggf6AYs5CRZnqg36K6tM6VJpXbMitUuZMIyn2hcl-oPBbaBG4O7jouTHLEfxpsgLAFPrLc7P7QycFoNvgt99ts5irzecyq8k3ygARMPs8jGb3QyYLNljIi363zjlc</recordid><startdate>20141101</startdate><enddate>20141101</enddate><creator>Liu, Ying</creator><creator>Niu, Simiao</creator><creator>Yang, Qing</creator><creator>Klein, Benjamin D. B.</creator><creator>Zhou, Yu Sheng</creator><creator>Wang, Zhong Lin</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7X8</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20141101</creationdate><title>Theoretical Study of Piezo-phototronic Nano-LEDs</title><author>Liu, Ying ; Niu, Simiao ; Yang, Qing ; Klein, Benjamin D. 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B.</au><au>Zhou, Yu Sheng</au><au>Wang, Zhong Lin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Theoretical Study of Piezo-phototronic Nano-LEDs</atitle><jtitle>Advanced materials (Weinheim)</jtitle><addtitle>Adv. Mater</addtitle><date>2014-11-01</date><risdate>2014</risdate><volume>26</volume><issue>42</issue><spage>7209</spage><epage>7216</epage><pages>7209-7216</pages><issn>0935-9648</issn><eissn>1521-4095</eissn><abstract>Two‐dimensional finite‐element simulation of the piezo‐phototronic effect in p–n‐junction‐based devices is carried out for the first time. A charge channel can be induced at the p–n junction interface when strain is applied, given the n‐side is a piezoelectric semiconductor and the p‐type side is non‐piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light‐emission efficiency in piezo‐phototronic light‐emitting devices.</abstract><cop>Germany</cop><pub>Blackwell Publishing Ltd</pub><pmid>25205535</pmid><doi>10.1002/adma.201402328</doi><tpages>8</tpages></addata></record> |
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subjects | Channels depletion charge channels Devices finite-element method Mathematical analysis P-type semiconductors piezo-phototronics Piezoelectricity Semiconductors Simulation Strain |
title | Theoretical Study of Piezo-phototronic Nano-LEDs |
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