Ferroelectricity in Si-Doped HfO2 Revealed: A Binary Lead-Free Ferroelectric

Ferroelectricity in Si-Doped HfO2 Revealed: A Binary Lead-Free Ferroelectric

Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si‐doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric prop...

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Veröffentlicht in:Advanced materials (Weinheim) 2014-12, Vol.26 (48), p.8198-8202
Hauptverfasser: Martin, Dominik, Müller, Johannes, Schenk, Tony, Arruda, Thomas M., Kumar, Amit, Strelcov, Evgheni, Yurchuk, Ekaterina, Müller, Stefan, Pohl, Darius, Schröder, Uwe, Kalinin, Sergei V., Mikolajick, Thomas
Format: Artikel
Sprache:eng
Schlagworte:
antiferroelectricity
electromechanical response mechanisms
ferroelectricity
HfO2
piezoresponse force microscopy (PFM)
Si-doping
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Zusammenfassung:Static domain structures and polarization dynamics of silicon doped HfO2 are explored. The evolution of ferroelectricity as a function of Si‐doping level driving the transition from paraelectricity via ferroelectricity to antiferroelectricity is investigated. Ferroelectric and antiferroelectric properties can be observed locally on the pristine, poled and electroded surfaces, providing conclusive evidence to intrinsic ferroic behavior.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201403115