Optical and Electrical Properties of Hydrogenated Silicon Oxide Thin Films Deposited by PECVD

Optical and Electrical Properties of Hydrogenated Silicon Oxide Thin Films Deposited by PECVD

In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The fil...

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Veröffentlicht in:Journal of Wuhan University of Technology. Materials science edition 2014-10, Vol.29 (5), p.900-905
Hauptverfasser: Shen, Hualong, Wang, Hui, Yan, Hui, Zhang, Ming, Pan, Qingtao, Jia, Haijun, Mai, Yaohua
Format: Artikel
Sprache:eng
Schlagworte:
Advanced Materials
Carbon dioxide
Chemistry and Materials Science
Deposition
Electrical properties
Materials Science
Oxides
PECVD法
Refractive index
Refractivity
Silicon oxides
Thin films
光学
气体混合物
氢化
氧化硅薄膜
沉积速率
电学性质
硅氧化物薄膜
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Zusammenfassung:In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H2, and PHy The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10-7 S/cm was obtained, which was suitable for the intermediate reflector layer.
ISSN:1000-2413
1993-0437
DOI:10.1007/s11595-014-1017-1