Physical properties of Zener tunnelling nano-devices in graphene

By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano‐devices were obtained. The scattering properties were then used with an adaptation of the Landauer formalism to calculate an analytical expression...

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Veröffentlicht in:Annalen der Physik 2014-10, Vol.526 (9-10), p.437-448
Hauptverfasser: Hills, Romilly D. Y., Kusmartsev, Feodor V.
Format: Artikel
Sprache:eng
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Zusammenfassung:By considering the direction of charge carriers and the conservation of probablity current the transmission properties of graphene Zener tunnelling nano‐devices were obtained. The scattering properties were then used with an adaptation of the Landauer formalism to calculate an analytical expression for current and conductance. The numerical results of the IV characteristics were then briefly discussed for the graphene step and Zener barrier. A comparison between the theoretical model and experimental results shows the similarities of graphene nanoribbons and infinite sheet graphene. By considering the direction of charge carriers and the conservation of probability current the transmission properties of Landau‐Zener graphene nano‐devices were obtained. The scattering properties were then used with an adaptation of the Landauer formalism to calculate an analytical expression for current and conductance. The numerical results of the IV characteristics were then briefly discussed for the graphene step and asymmetrical barrier. A comparison between the theoretical model and experimental results shows the similarities of graphene nanoribbons and infinite sheet graphene.
ISSN:0003-3804
1521-3889
DOI:10.1002/andp.201400147