Planar n-SI-n heterostructure athermal InP (110) optical modulator

Planar n-SI-n heterostructure athermal InP (110) optical modulator

We report an athermal InP (110) optical modulator with a simple planar n-SI-n heterostructure. A symmetrical push-pull operation provides a high-extinction ratio of >25 dB over the entire C-band and zero-chirp modulation. A Mach-Zehnder optical modulator (MZM) exhibits a 3 dB-EO bandwidth of 30 G...

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Veröffentlicht in:Optics express 2014-10, Vol.22 (21), p.25776-25781
Hauptverfasser: Ogiso, Yoshihiro, Nakanishi, Yasuhiko, Kanazawa, Shigeru, Yamada, Eiichi, Tanobe, Hiromasa, Arai, Masakazu, Shibata, Yasuo, Kohtoku, Masaki
Format: Artikel
Sprache:eng
Schlagworte:
Indium - chemistry
Microscopy
Microscopy, Electron, Scanning
Optical Devices
Phosphines - chemistry
Radio Waves
Signal Processing, Computer-Assisted
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Zusammenfassung:We report an athermal InP (110) optical modulator with a simple planar n-SI-n heterostructure. A symmetrical push-pull operation provides a high-extinction ratio of >25 dB over the entire C-band and zero-chirp modulation. A Mach-Zehnder optical modulator (MZM) exhibits a 3 dB-EO bandwidth of 30 GHz and 40-Gb/s NRZ high-speed modulation with wavelength and temperature insensitive operation. We also successfully demonstrate an MZM integrated twin-IQ modulator that exhibits 56-Gb/s × 2 athermal QPSK modulation at constant drive and bias voltages.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.22.025776