Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals

Open-circuit voltage improvement in tantalum-doped TiO2 nanocrystals

Enhanced electron concentration derived from Ta(5+) doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices co...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2014-12, Vol.16 (47), p.25679-25683
Hauptverfasser: Gu, Feng, Huang, Wenjuan, Wang, Shufen, Cheng, Xing, Hu, Yanjie, Lee, Pooi See
Format: Artikel
Sprache:eng
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Zusammenfassung:Enhanced electron concentration derived from Ta(5+) doping is responsible for the open-circuit voltage improvement due to the upward shift of the Fermi level, but the oxygen defects generated retard the negative shift of the Fermi level. By mediating the trap states, highly efficient DSSC devices could be achieved.
ISSN:1463-9084
DOI:10.1039/c4cp01655f