Atomically Engineered Metal–Insulator Transition at the TiO2/LaAlO3 Heterointerface

We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of m...

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Veröffentlicht in:	Nano letters 2014-11, Vol.14 (11), p.6743-6746
Hauptverfasser:	Minohara, Makoto, Tachikawa, Takashi, Nakanishi, Yasuo, Hikita, Yasuyuki, Kourkoutis, Lena F, Lee, Jun-Sik, Kao, Chi-Chang, Yoshita, Masahiro, Akiyama, Hidefumi, Bell, Christopher, Hwang, Harold Y
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron states Exact sciences and technology Metal-insulator transitions and other electronic transitions Physics
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Beschreibung
Zusammenfassung:	We demonstrate that the atomic boundary conditions of simple binary oxides can be used to impart dramatic changes of state. By changing the substrate surface termination of LaAlO3 (001) from AlO2 to LaO, the room-temperature sheet conductance of anatase TiO2 films are increased by over 3 orders of magnitude, transforming the intrinsic insulating state to a high mobility metallic state, while maintaining excellent optical transparency.
ISSN:	1530-6984 1530-6992
DOI:	10.1021/nl5039192