Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects

Intrinsic topological insulators are realized by alloying Bi2Te3 with Bi2Se3. Angle‐resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First‐principles calculations of the native defect landscape highlight the key role of anti‐s...

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Veröffentlicht in:Advanced materials (Weinheim) 2012-04, Vol.24 (16), p.2154-2158
Hauptverfasser: Scanlon, D. O., King, P. D. C., Singh, R. P., de la Torre, A., Walker, S. McKeown, Balakrishnan, G., Baumberger, F., Catlow, C. R. A.
Format: Artikel
Sprache:eng
Schlagworte:
Alloys - chemistry
ARPES
Bismuth - chemistry
bulk conductivity
Bulk transporters
Defects
density-functional theory
Electric Impedance
Insulators
Landscapes
Mathematical analysis
Optimization
Selenium - chemistry
Tellurium - chemistry
topological insulators
Topology
Transport
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Zusammenfassung:Intrinsic topological insulators are realized by alloying Bi2Te3 with Bi2Se3. Angle‐resolved photoemission and bulk transport measurements reveal that the Fermi level is readily tuned into the bulk bandgap. First‐principles calculations of the native defect landscape highlight the key role of anti‐site defects for achieving this, and predict optimal growth conditions to realize maximally resistive topological insulators.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201200187