Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer
Germanium-tin (Ge sub(1-x)Sn sub(x)) p-type metal-oxide-semiconductor held effect transistors (pMOSFETs) were fabricated using a strained Ge sub(0.985)Sn sub(0.015) thin him that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited usi...
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| Veröffentlicht in: | Chinese physics letters 2013-11, Vol.30 (11), p.118501-1-118501-4 |
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| container_end_page | 1-118501-4 |
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| container_issue | 11 |
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| container_title | Chinese physics letters |
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| creator | Su, Shao-Jian Han, Gen-Quan Zhang, Dong-Liang Zhang, Guang-Ze Xue, Chun-Lai Wang, Qi-Ming Cheng, Bu-Wen |
| description | Germanium-tin (Ge sub(1-x)Sn sub(x)) p-type metal-oxide-semiconductor held effect transistors (pMOSFETs) were fabricated using a strained Ge sub(0.985)Sn sub(0.015) thin him that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge sub(0.985)Sn sub(0.015) layer was grown by solid source molecular beam epitaxy. Ge sub(0.985)Sn sub(0.015) pMOS-FETs with Si surface passivation, TaN/HfO sub(2) gate stack, and nickel stanogermanide [Ni(Ge sub(1-x)Sn sub(x))] source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm super(2)/V times s at an inversion carrier density of 1 X 10 super(13) cm super(-2). |
| doi_str_mv | 10.1088/0256-307X/30/11/118501 |
| format | Article |
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The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge sub(0.985)Sn sub(0.015) layer was grown by solid source molecular beam epitaxy. Ge sub(0.985)Sn sub(0.015) pMOS-FETs with Si surface passivation, TaN/HfO sub(2) gate stack, and nickel stanogermanide [Ni(Ge sub(1-x)Sn sub(x))] source/drain were fabricated on the grown substrate. 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The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge sub(0.985)Sn sub(0.015) layer was grown by solid source molecular beam epitaxy. Ge sub(0.985)Sn sub(0.015) pMOS-FETs with Si surface passivation, TaN/HfO sub(2) gate stack, and nickel stanogermanide [Ni(Ge sub(1-x)Sn sub(x))] source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm super(2)/V times s at an inversion carrier density of 1 X 10 super(13) cm super(-2).</description><subject>Buffers (chemistry)</subject><subject>Carrier density</subject><subject>Chemical vapor deposition</subject><subject>Devices</subject><subject>Germanium</subject><subject>Hafnium oxide</subject><subject>Inversions</subject><subject>Silicon substrates</subject><issn>0256-307X</issn><issn>1741-3540</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LxDAQQIMouK7-BcnRS91M0ibtURd3XVAW7B68hTSdYqQfa9Ki_nuzrgjDzOXxYB4h18BugeX5gvFMJoKp14VgC4A4ecbghMxApZCILGWnZPYPnZOLEN4ZixTAjNTl6I3rsaZr9J3p3dQlO9fT_fO2XD3s6MpU3lkzRmDoqaGla50d-iTOpg9Ta8bB03KqQtSMSD_d-EZfsDVfv0Z6PzUN-kty1pg24NXfnZNddC8fk6fterO8e0osz_MxAZVXNa9zY0EpKBoseAYyzQCZUhmzJuWisopVhbVouMBCClTxDyGxSpmYk5ujdu-HjwnDqDsXLLat6XGYggbJGZOikDyi8ohaP4TgsdF77zrjvzUwfaiqD8H0IVhcGkAfq4ofFnxqCg</recordid><startdate>20131101</startdate><enddate>20131101</enddate><creator>Su, Shao-Jian</creator><creator>Han, Gen-Quan</creator><creator>Zhang, Dong-Liang</creator><creator>Zhang, Guang-Ze</creator><creator>Xue, Chun-Lai</creator><creator>Wang, Qi-Ming</creator><creator>Cheng, Bu-Wen</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20131101</creationdate><title>Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer</title><author>Su, Shao-Jian ; Han, Gen-Quan ; Zhang, Dong-Liang ; Zhang, Guang-Ze ; Xue, Chun-Lai ; Wang, Qi-Ming ; Cheng, Bu-Wen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c288t-178bd2d8ac17719fe92516451e07750ca423bc70b9ccea23e963e718136eb403</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Buffers (chemistry)</topic><topic>Carrier density</topic><topic>Chemical vapor deposition</topic><topic>Devices</topic><topic>Germanium</topic><topic>Hafnium oxide</topic><topic>Inversions</topic><topic>Silicon substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Su, Shao-Jian</creatorcontrib><creatorcontrib>Han, Gen-Quan</creatorcontrib><creatorcontrib>Zhang, Dong-Liang</creatorcontrib><creatorcontrib>Zhang, Guang-Ze</creatorcontrib><creatorcontrib>Xue, Chun-Lai</creatorcontrib><creatorcontrib>Wang, Qi-Ming</creatorcontrib><creatorcontrib>Cheng, Bu-Wen</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Chinese physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Su, Shao-Jian</au><au>Han, Gen-Quan</au><au>Zhang, Dong-Liang</au><au>Zhang, Guang-Ze</au><au>Xue, Chun-Lai</au><au>Wang, Qi-Ming</au><au>Cheng, Bu-Wen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer</atitle><jtitle>Chinese physics letters</jtitle><date>2013-11-01</date><risdate>2013</risdate><volume>30</volume><issue>11</issue><spage>118501</spage><epage>1-118501-4</epage><pages>118501-1-118501-4</pages><issn>0256-307X</issn><eissn>1741-3540</eissn><abstract>Germanium-tin (Ge sub(1-x)Sn sub(x)) p-type metal-oxide-semiconductor held effect transistors (pMOSFETs) were fabricated using a strained Ge sub(0.985)Sn sub(0.015) thin him that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge sub(0.985)Sn sub(0.015) layer was grown by solid source molecular beam epitaxy. Ge sub(0.985)Sn sub(0.015) pMOS-FETs with Si surface passivation, TaN/HfO sub(2) gate stack, and nickel stanogermanide [Ni(Ge sub(1-x)Sn sub(x))] source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm super(2)/V times s at an inversion carrier density of 1 X 10 super(13) cm super(-2).</abstract><doi>10.1088/0256-307X/30/11/118501</doi></addata></record> |
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| identifier | ISSN: 0256-307X |
| ispartof | Chinese physics letters, 2013-11, Vol.30 (11), p.118501-1-118501-4 |
| issn | 0256-307X 1741-3540 |
| language | eng |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Buffers (chemistry) Carrier density Chemical vapor deposition Devices Germanium Hafnium oxide Inversions Silicon substrates |
| title | Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer |
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