Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer

Germanium-tin (Ge sub(1-x)Sn sub(x)) p-type metal-oxide-semiconductor held effect transistors (pMOSFETs) were fabricated using a strained Ge sub(0.985)Sn sub(0.015) thin him that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge sub(0.985)Sn sub(0.015) layer was grown by solid source molecular beam epitaxy. Ge sub(0.985)Sn sub(0.015) pMOS-FETs with Si surface passivation, TaN/HfO sub(2) gate stack, and nickel stanogermanide [Ni(Ge sub(1-x)Sn sub(x))] source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm super(2)/V times s at an inversion carrier density of 1 X 10 super(13) cm super(-2).