Oxidation Behavior of SiC Whiskers at 600-1400 degree C in Air

Oxidation Behavior of SiC Whiskers at 600-1400 degree C in Air

The oxidation behavior of SiC whiskers (SiCW) with a diameter size of 50-200 nm has been investigated at 600 degree C-1400 degree C in air. Experimental results reveal that SiCW exhibit a low oxidation rate below 1100 degree C while a significant larger oxidation rate after that. This can be attribu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of the American Ceramic Society 2014-09, Vol.97 (9), p.2698-2701
Hauptverfasser: Kuang, Jianlei, Cao, Wenbin
Format: Artikel
Sprache:eng
Schlagworte:
Ceramics
Diffusion
Diffusion layers
Mathematical analysis
Oxidation
Oxidation rate
Protective
Silicon carbide
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The oxidation behavior of SiC whiskers (SiCW) with a diameter size of 50-200 nm has been investigated at 600 degree C-1400 degree C in air. Experimental results reveal that SiCW exhibit a low oxidation rate below 1100 degree C while a significant larger oxidation rate after that. This can be attributed to the small diameter size of SiCW, which determines that it is hard to form a protective SiO2 layer thick enough to hamper the diffusion of oxygen effectively. Both nonisothermal and isothermal oxidation kinetics were studied and the apparent oxidation energy was calculated to further understand the oxidation behavior of the SiCW.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.13096