Raman Modes of MoS2 Used as Fingerprint of van der Waals Interactions in 2-D Crystal-Based Heterostructures

In this work, we use Raman spectroscopy as a nondestructive and rapid technique for probing the van der Waals (vdW) forces acting between two atomically thin crystals, where one is a transition metal dichalcogenide (TMDC). In this work, MoS2 is used as a Raman probe: we show that its two Raman-activ...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ACS nano 2014-10, Vol.8 (10), p.9914-9924
Hauptverfasser: Zhou, Kai-Ge, Withers, Freddie, Cao, Yang, Hu, Sheng, Yu, Geliang, Casiraghi, Cinzia
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this work, we use Raman spectroscopy as a nondestructive and rapid technique for probing the van der Waals (vdW) forces acting between two atomically thin crystals, where one is a transition metal dichalcogenide (TMDC). In this work, MoS2 is used as a Raman probe: we show that its two Raman-active phonon modes can provide information on the interaction between the two crystals. In particular, the in-plane vibration (E2g 1) provides information on the in-plane strain, while the out-of-plane mode (A1g) gives evidence for the quality of the interfacial contact. We show that a vdW contact with MoS2 is characterized by a blue shift of +2 cm–1 of the A1g peak. In the case of a MoS2/graphene heterostructure, the vdW contact is also characterized by a shift of +14 cm–1 of the 2D peak of graphene. Our approach offers a very simple, nondestructive, and fast method to characterize the quality of the interface of heterostructures containing atomically thick TMDC crystals.
ISSN:1936-0851
1936-086X
DOI:10.1021/nn5042703