Competition between π-hole interaction and hydrogen bond in the complexes of F2XO (X = C and Si) and HCN
Complexes F 2 XO∙∙∙HCN (X = C and Si) have been studied by quantum chemical calculations at the MP2/aug-cc-pVTZ level to investigate the competition between π-hole interaction and hydrogen bond. F 2 XO has a dual role of a Lewis acid and base with the π-hole on the X atom and the O atom to participa...
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Veröffentlicht in: | Journal of molecular modeling 2014-11, Vol.20 (11), p.2493-2493, Article 2493 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Complexes F
2
XO∙∙∙HCN (X = C and Si) have been studied by quantum chemical calculations at the MP2/aug-cc-pVTZ level to investigate the competition between π-hole interaction and hydrogen bond. F
2
XO has a dual role of a Lewis acid and base with the π-hole on the X atom and the O atom to participate in the π-hole interaction and hydrogen bond with HCN, respectively. Both types of interactions become stronger for X = Si, and the π-hole interaction is much stronger than the hydrogen bond, particularly, the π-hole interaction in F
2
SiO∙∙∙NCH complex shows a binding energy of −119.8 kJ mol
−1
. The C-H∙∙∙O hydrogen bond is dominated by the electrostatic interaction, and this conclusion holds for the π-hole interaction in F
2
CO∙∙∙NCH complex, but the electrostatic and polarization contributions are similar in F
2
SiO∙∙∙NCH complex. |
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ISSN: | 1610-2940 0948-5023 |
DOI: | 10.1007/s00894-014-2493-0 |