Angular dependence of the electronic energy loss for low energy heavy ions under channeling conditions

The electronic stopping of heavy ions with 2 ≤ Z 1 ≤ 36 in 〈110〉 direction of a 350 nm thick silicon single crystal was measured for velocities below Bohr velocity. Large oscillations in the electronic stopping power are observed for best-channeled ions of the same velocity, whereas for ions emergin...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 1996, Vol.115 (1), p.315-318
Hauptverfasser: Gelfort, S., Kerkow, H., Stolle, R., Petukhov, V.P., Romanowski, E.A.
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Sprache:eng
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Zusammenfassung:The electronic stopping of heavy ions with 2 ≤ Z 1 ≤ 36 in 〈110〉 direction of a 350 nm thick silicon single crystal was measured for velocities below Bohr velocity. Large oscillations in the electronic stopping power are observed for best-channeled ions of the same velocity, whereas for ions emerging from the foil some degrees to the channel axis the oscillations are strongly reduced.
ISSN:0168-583X
1872-9584
DOI:10.1016/0168-583X(96)00174-7