Correlation of diffusion and performance in sequentially processed P3HT/PCBM heterojunction films by time-resolved neutron reflectometry

Control over the structure of donor/acceptor blends is essential for the development of solution processable organic solar cells (OSCs). We have used time-resolved neutron reflectometry (NR) and in situannealing to investigate the nanoscale structure and interdiffusion of sequentially spin-coated th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2013-01, Vol.1 (14), p.2593-2598
Hauptverfasser: Lee, Kwan H., Zhang, Yuliang, Burn, Paul L., Gentle, Ian R., James, Michael, Nelson, Andrew, Meredith, Paul
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Control over the structure of donor/acceptor blends is essential for the development of solution processable organic solar cells (OSCs). We have used time-resolved neutron reflectometry (NR) and in situannealing to investigate the nanoscale structure and interdiffusion of sequentially spin-coated thin films of poly(3-n-hexylthiophene-2,5-diyl) (P3HT)/[6,6]-phenyl-C sub(61)-butyric acid methyl ester (PCBM) and correlated the evolving structure with the device performance. While the as-prepared film shows a clear two-layer structure it is evident that (19 wt%) PCBM has percolated throughout the lower P3HT layer. Upon heating, analysis of time-resolved NR data shows that the diffusion process is dependent on the annealing temperature. At temperatures up to 110 degree C, the two-layer structure is retained and only a small amount of PCBM diffuses from the interface into the lower layer, increasing the total PCBM content throughout the P3HT layer to 26 wt%. Significantly, this small change in acceptor content leads to a profound increase in device performance; with the power conversion efficiency (PCE) of the OSCs increasing from 0.47% (unannealed, 19 wt% PCBM) to 3.23% (annealed, 26 wt% PCBM) with the latter showing a similar efficiency to devices prepared from a blend containing 50 wt% PCBM. Further annealing at 120 and 130 degree C sees rapid interdiffusion between the two layers, along with an overall expansion in the thickness of the bilayer film. Despite the complete intermixing of the PCBM and P3HT to form a structure resembling a bulk heterojunction, essentially no improvement in device performance was observed for annealing at temperatures above 110 degree C.
ISSN:2050-7526
2050-7534
DOI:10.1039/c3tc00063j