Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO sub(2) thin films

We have fabricated ZrO sub(2) thin films by sol-gel deposition and annealed them at 300, 500 and 700 degree C. Reproducible I-V curves can be obtained for the device Cu/ZrO sub(2)/ATO which is measured at room temperature (300 K). During the RESET operation, R sub(L) and R sub(H) values can be contr...

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Veröffentlicht in:	Bulletin of materials science 2014-05, Vol.37 (3), p.455-460
Hauptverfasser:	Li, Ying, Zhao, Gaoyang, Su, Jian, Shen, Erfeng, Ren, Yang
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Copper Devices Electric potential Thin films Volt-ampere characteristics Voltage Zirconium dioxide
Online-Zugang:	Volltext
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