Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO sub(2) thin films

We have fabricated ZrO sub(2) thin films by sol-gel deposition and annealed them at 300, 500 and 700 degree C. Reproducible I-V curves can be obtained for the device Cu/ZrO sub(2)/ATO which is measured at room temperature (300 K). During the RESET operation, R sub(L) and R sub(H) values can be controlled by the RESET voltage. Moreover, the Cu/ZrO sub(2)/ATO device which the ZrO sub(2) thin film annealed at 300 degree C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of R sub(off)/R sub(on) reduced when the measured temperature decreased. When the I-V measurement temperature decreases, R sub(on) decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO sub(2) films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.