A novel SOI MESFET by \(\uppi \) -shaped gate for improving the driving current

This paper introduces a novel silicon-on-insulator (SOI) metal-semiconductor field-effect transistor (MESFET) with \(\uppi \) -shaped gate with triple workfunction ( \(\uppi \) -SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the propo...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Journal of computational electronics 2014-06, Vol.13 (2), p.562-568
Hauptverfasser:	Shahnazarisani, Hadi, Orouji, Ali A, Anvarifard, Mohammad K
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Computer simulation Density Direct current Electric potential Gates MESFETs Voltage
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!