A novel SOI MESFET by \(\uppi \) -shaped gate for improving the driving current

This paper introduces a novel silicon-on-insulator (SOI) metal-semiconductor field-effect transistor (MESFET) with \(\uppi \) -shaped gate with triple workfunction ( \(\uppi \) -SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the \(\uppi \) -SOI MESFET structure gets 54 % enhancement compared with that of the C-SOI MESFET structure and also the driving current of the \(\uppi \) -SOI MESFET structure gets 66.66 % enhancement compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency and maximum available gain have been evaluated and improved in the proposed structure.