$A novel SOI MESFET by $\uppi $ -shaped gate for improving the driving current$

A novel SOI MESFET by $\uppi $ -shaped gate for improving the driving current

This paper introduces a novel silicon-on-insulator (SOI) metal-semiconductor field-effect transistor (MESFET) with $\uppi $ -shaped gate with triple workfunction ( $\uppi $ -SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the propo...

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Veröffentlicht in:	Journal of computational electronics 2014-06, Vol.13 (2), p.562-568
Hauptverfasser:	Shahnazarisani, Hadi, Orouji, Ali A, Anvarifard, Mohammad K
Format:	Artikel
Sprache:	eng
Schlagworte:	Breakdown Computer simulation Density Direct current Electric potential Gates MESFETs Voltage
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container_end_page	568
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container_title	Journal of computational electronics
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creator	Shahnazarisani, Hadi Orouji, Ali A Anvarifard, Mohammad K
description	This paper introduces a novel silicon-on-insulator (SOI) metal-semiconductor field-effect transistor (MESFET) with $\uppi $ -shaped gate with triple workfunction ( $\uppi $ -SOI MESFET) to improve the DC and radio frequency characteristics. The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the $\uppi $ -SOI MESFET structure gets 54 % enhancement compared with that of the C-SOI MESFET structure and also the driving current of the $\uppi $ -SOI MESFET structure gets 66.66 % enhancement compared with that of the C-SOI MESFET structure. Other main characteristics such as maximum output power density, maximum oscillation frequency and maximum available gain have been evaluated and improved in the proposed structure.
doi_str_mv	10.1007/s10825-014-0569-9
format	Article
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The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the $\uppi $ -SOI MESFET structure gets 54 % enhancement compared with that of the C-SOI MESFET structure and also the driving current of the $\uppi $ -SOI MESFET structure gets 66.66 % enhancement compared with that of the C-SOI MESFET structure. 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The DC and radio frequency characteristics of the proposed structure are analyzed by 2-D ATLAS international simulator and compared with a conventional SOI MESFET (C-SOI MESFET). The simulated results show that the proposed SOI MESFET has excellent effect on the breakdown voltage and the driving current. The breakdown voltage of the $\uppi $ -SOI MESFET structure gets 54 % enhancement compared with that of the C-SOI MESFET structure and also the driving current of the $\uppi $ -SOI MESFET structure gets 66.66 % enhancement compared with that of the C-SOI MESFET structure. 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subjects	Breakdown Computer simulation Density Direct current Electric potential Gates MESFETs Voltage
title	A novel SOI MESFET by $\uppi $ -shaped gate for improving the driving current
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A novel SOI MESFET by \(\uppi \) -shaped gate for improving the driving current