Rectifying the Current-Voltage Characteristics of a LiNbO sub(3) Film/GaN Heterojunction

Epitaxial LiNbO sub(3) (LNO) films are grown on n-type GaN semiconductor substrates, forming LNO/GaN p-n junctions. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the junctions are studied. The I-V curve shows a clear rectifying property with a turn-on voltage of 2.4 V. F...

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Veröffentlicht in:	Chinese physics letters 2011-01, Vol.28 (10), p.107703-1-107703-4
Hauptverfasser:	HAO, Lan-Zhong, LIU, Yun-Jie, ZHU, Jun, LEI, Hua-Wei, LIU, Ying-Ying, TANG, Zheng-Yu, ZHANG, Ying, ZHANG, Wan-Li, LI, Yan-Rong
Format:	Artikel
Sprache:	eng
Schlagworte:	Electric potential Epitaxial growth Gallium nitrides Heterojunctions N-type semiconductors Semiconductors Transits Voltage
Online-Zugang:	Volltext
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